Infineon launches CoolGaN™ IPS series products for 30 W-500W power level applications

[Munich, Germany, May 11, 2021] Power switches made of gallium nitride (GaN), a wide bandgap (WBG) material, open a new era of power electronics with its excellent efficiency and high-speed switching frequency . Following this development trend, Infineon Technologies AG (FSE: IFX/OTCQX: IFNNY) launched the CoolGaN™ IPS series of integrated power stage (IPS) products, which became the latest product in its many WBG power component portfolios. The basic product portfolio of IPS includes half-bridge and single-channel products. The target market is low- to medium-power applications, such as chargers, adapters and other switching power supplies (SMPS).


The representative product 600 V CoolGaN half-bridge IPS IGI60F1414A1L is suitable for low to medium power range, small and lightweight design applications. The appearance is an 8x8 QFN-28 package type, which is enhanced for heat dissipation and can provide extremely high power density for the system. This product contains two 140 mΩ / 600 V CoolGaN enhanced (e-mode) HEMT switches and Infineon’s EiceDRIVER™ series dedicated high- and low-side gate drivers for electrical isolation.

The isolated gate driver has two digital PWM inputs, making IGI60F1414A1L easier to control. In order to achieve the goals of shortening development time, reducing system bill of materials items and reducing total costs, the use of integrated isolation functions, clear separation of digital and power grounding, and simplified PCB configuration are all indispensable elements. The gate driver uses Infineon's single-chip coreless transformer (CT) technology to effectively isolate the input from the output. Even under ultra-fast switching transients where the voltage rise or fall rate exceeds 150 V/ns, high-speed characteristics and outstanding stability are still ensured.

The switching characteristics of IGI60F1414A1L can be easily realized by some passive components of the gate path, such as resistive devices, according to different applications. For example, this feature can optimize the current or voltage rate to reduce electromagnetic interference (EMI) effects, steady-state gate current adjustment, and negative gate voltage drive, and operate stably in hard-switching applications.

In addition, the system-in-package integration and the high precision and stable transmission delay of the gate driver enable IGI60F1414A1L to provide the lowest system dead time. This will help maximize system efficiency and increase the power density of charger and adapter solutions to a higher level, reaching 35 W/in³. Flexible, simple and fast design features are also suitable for other applications such as LLC resonant topologies, motor drives and so on.

Availability

IGI60F1414A1L in the enhanced heat dissipation 8x8QFN-28 package is open for order.

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